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실온에서의 이중 장벽 구조의 Resonant Tunneling
강태원,홍치우,김순구,엄기석,정관수,정창섭 慶熙大學校 材料科學技術硏究所 1988 材料科學技術硏究論集 Vol.1 No.-
AlAs/GaAn/AlAs resonant tunneling structures were grown by molecular beam epitaxy (MBE). In this work we observe the occurrence of resonant tunneling through a GaAs/AlAs double barrier at room temperature. A peak to valley current ratio of 1.4 was observed. And we aware of a small deviation in current-voltage characteristics over the sample.