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이온증착된 Al-1% Si 박막의 내구성과 미세조직에 미치는 Cu 첨가의 영향
고철기,김재갑,조경수,김헌도 대한금속재료학회(대한금속학회) 1991 대한금속·재료학회지 Vol.29 No.3
Al-1%Si thin films with a small amount of copper were deposited on SiO₂ in a single wafer magnetron-sputtering system, followed by BPSG(boro-phospho-silicate glass) deposition. Hillock, grain size variations and etchability of metal films were investigated scanning electron and optical microscopes. Cross-sectional transmission electron microscopy analysis showed that CuAl₂ precipitated along the interface of BPSG and the metal film in as-deposit condition and they were show redistributed homogeneously after annealing treatment. These results were consistent with those obtained from AES and RBS. Electromigration tests were conducted for the metal films with 0.5% and 2% copper contents. The increase in electromigration resistance may be attributed to the homogeneous redistribution of copper in Al-1%Si-X%Cu metal films.