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전력 변환 시스템용 방열판의 방열 특성 개선을 위한 수치해석적 파라미터 연구
박성현(Sung Hyun Park),권민호(Minho Kwon),제갈준혁(Junhyeok Jegal),김혁규(Hyeukgyu Kim),김범석(Beom Seok Kim) 대한기계학회 2023 대한기계학회 춘추학술대회 Vol.2023 No.11
GaN device play a critical role in Power Conversion Systems (PCS) by modulating electrical signals to regulate current flow. Recently, the miniaturization of GaN MOSFETs within PCS has led to excessive heat generation per unit volume, which causes a rise in temperature. The increased temperature damages the GaN device and decline its electrical performance. In this study, we evaluate the thermal dissipation performance of GaN device heatsink through numerical analysis. We conducted 3D steady-state conjugated heat transfer simulations by using the ANSYS Fluent. We analyzed the impact on local temperature and pressure drop by conducting a parametric study on the fans flow rate, fin spacing. In our research, we verified the trade-off relationship between heatsink cooling performance and pressure drop. This study is expected to provide guidance for the optimal design of heatsinks, making a significant contribution to the field of heat transfer.