http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
논문 : 표면처리 ; Mo기판에서 Si의 화학증착에 관한 연구
윤진국 ( Jin Kook Yoon ),정병성 ( Byoung Seong Jeong ),고흥석 ( Hung Suk Ko ),김재수 ( Jae Soo Kim ),최종술 ( Chong Sool Choi ) 대한금속재료학회 ( 구 대한금속학회 ) 1998 대한금속·재료학회지 Vol.36 No.7
Under deposition conditions limited by gas transport, the chemical vapor deposition of silicon on molybdenum substrate was investigated in the temperature range of 1173K and 1473K using hot-wall horizontal reactor and SiCl4-H2 gas mixtures. The deposition amount of silicon increased proportionally to the square root of total flow rate of reactants in which the outer layer of molybdenum substrate was pure silicon at 1173K, but to the quarter of that in which that was MoSi2 at 1473K. The deposition rate of silicon obeyed linear law at pure silicon but parabolic law at MoSi2. This suggested that the deposition rate of silicon was dependent on the concentration of silicon on substrate surface because the gaseous diffusion flux of reactants through a boundary layer was a function of that. This phenomenon was confirmed by the results obtained at 1298K that the deposition rate of silicon obeyed parabolic law below 4.3 hrs and changed linear law over 4.3 hrs.
SiCl4-H2 반응가스에 의한 Ni 기판위에서 Si 의 화학증착속도론
김재수,최종술,유재은,맹선재,윤진국,정병성 대한금속재료학회(대한금속학회) 1998 대한금속·재료학회지 Vol.36 No.10
Kinetics of chemical vapor deposition of silicon on Ni substrate was investigated in the temperature range between 1173K and 1323K using hot-wall reactor and a gas mixture of SiCl₄ and H₂ The deposition rate of silicon was proportional to the square root of total flow rate of reactants and constant at a rate above 100sccm at 1273K and 300sccm at 1273K, respectively. The dependence of deposition rate of silicon on Cl/H input ratio was explained by the combined effect of that on the deposition rate and etching rate of silicon. Kinetics of silicon deposition obeyed the linear rate law. The deposition rate of silicon was controlled by the gas transport process through a gas boundary layer to the Ni substrate over 1248K and the activation energy for silicon deposition was 2.5 ㎉/mole. However, the rate determining step was chemical reaction process for silicon deposition below 1235K because the activation energy was 26.5 ㎉/mole, which was similar to that for silicon deposition on Si substrate.