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이우민(Woomin Lee),김경덕(Kenneth David Kihm),박재성(Jae Sung Park),이준식(Joon Sik Lee) 대한기계학회 2015 대한기계학회 춘추학술대회 Vol.2015 No.11
Chemically vapor deposited (CVD) graphene grows a polycrystalline structure that consists of many grain domains. Grain boundaries between grain domains will have negative effect on the in-plane thermal transport in polycrystalline graphene. In this study, we measured thermal conductance of grain boundaries in polycrystalline graphene grown by CVD. Three CVD grown graphene samples with different grain sizes, ranging from 0.5 ㎛ to 4 ㎛, were made by carefully controlling the synthesis conditions and the grain sizes of each graphene were defined by mild dry annealing (MDA) and digital image processing. The thermal conductivities of the graphene were measured by using the optothermal Raman technique that is based on the Raman signal peak dependency on temperature. Finally, the thermal conductance of grain boundaries in graphene was obtained by fitting a theoretical model describing effective thermal conductance of common polycrystalline materials. We find the boundary conductance of graphene to be about 0.9 GW/㎡K and the boundary conductance slightly increases with increasing temperature. This result will help the predictions of thermal transport in polycrystalline graphene for simulation.