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나노 임프린트 리소그라피와 식각 공정을 통한 알루미늄 나노 패턴 제조 방법
김상훈(Sang Hoon Kim),이기동(Ki-Dong Lee),안세원(Seh-Won Ahn),김진성(Jin-Sung Kim),박주도(Joo-Do Park),이상훈(Sarng H. Lee),윤필원(Phil-Won Yoon) 대한기계학회 2004 대한기계학회 춘추학술대회 Vol.2004 No.11
Aluminum(Al) nano-pattern with a 200 ㎚ period and a 150 ㎚ height was achieved using nanoimprint lithography(NIL) and reactive ion etching (RIE). Pattern formation of etch mask for Al film etching was performed by nanoimprint lithography. We used a SiO₂ mold with a size of 5 × 5 ㎠ which was fabricated using the laser interference lithography and RIE. We optimized imprint process for Al/glass substrate and tested imprint resists for the Al etching. Among the tested imprint resists, mr-I 8020 resist shows a good etch selectivity of 2 against Al. Nanoimprint lithography combined with RIE is proved to be useful for the fabrication of Al nano-pattern.