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[Co / Cu / NiFe / Cu] 다층박막의 자기저항효과에 관한 연구
정진봉(J. B. Jeong),박창만(C. M. Park),이기암(K. A. Lee),황도근(D. G. Hwang),이상석(S. S. Lee) 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.3
A study of the dependence of the magnetoresistance in glass\[Cu_(xÅ)\NiFe_(50Å)\Cu_(xÅ)\Co_(50Å)]_N (X = 8, 10, 14, 18, 22, 26, 28, 38, 48, 58 Å, N = 2, 3, 4, 10, 20) multilayers prepared by dc magnetron sputtering on the interlayer thickness of Cu (X), the number of multylayer(N) and annealing temperature has been performed. Resistance measurement were made by four terminal method, and the magnetic field applied to perpendicular and parallel for the current. The maximum magnetoresistance(MR) ratio(%) was appeared in the vicinity of 10 Å in Cu layer, and it was oscillated with the thickness of Cu. The MR ratio was increased with the number of layers N, however the ratio for the N = 4 layers decreased rather than the N = 3 layers. The dependence of the ratio on the annealing temperature was increased to 250 ℃.
GdFe 박막의 증착속도에 따른 조성 및 자기특성의 변화
최영근(Y. K. Choi),박창만(C. M. Park),백주열(J. Y. Beak),이기암(K. A. Lee),황도근(D. G. Hwang) 한국자기학회 1992 韓國磁氣學會誌 Vol.2 No.3
We have studied the variations of composition and magnetic properties with deposition rate in GdFe thin films by means of DC magnetron sputtering with the enhanced complex target method. Gd atomic percent was decreased with the increase of deposite rate. It appeared the transition phenomena at 1.0 Å/s the deposition rate. Also, the deposition rate increased with input power and the sputtering efficience was proportional to the number of Gd chip. An increase of the coercivity with input power can be interpreted by the large size of Fe crystal grains. We have introduced by the diffusion guard sputtering and it was effective for reproducibility of the sample. We have measured θk with Kerr angle gauge, and could observe that the θk was little varied with input power.
3% 방향성 규소강판의 표면 선긋기에 의한 Barkhausen Noise에 관한 연구
박창만(C. M. Park),이기암(K. A Lee),황도근(D. G. Hwang) 한국자기학회 1994 韓國磁氣學會誌 Vol.4 No.2
The Barkhausen noise was measured as the change of line width(39 ~ 1.22 ㎜) and scratching angle(90˚ - 50˚) with respect of rolling direction in grain-oriented 3% Si-Fe of 0.30 and 0.27 ㎜ thickness. The two peak phenomena of the noise envelope observed for non-scratching and scratching of line width 39 ㎜ was explained by large activation energy during 180˚ domain wall nucleation and annihilation processes. The amplitudes of the noise envelpoes were decreased as the decrement of scratching line width, but did not almost changed below line width of 9.75 ㎜. It was explained that the decrease in the envelope with increasing scratching number is associated with lower activation energy of 180˚ domain nucleation and annihilation in the vicinity of the scratching area. The noise power was decreased as narrower line width. The dependence of the power on the scratching angle was sharpest decreaded at the 50 angle.