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김영수(Young-Su Kim),이강승(Kang-Sung Lee),홍윤기(Yun-Ki Hong),정윤하(Yoon-Ha Jeong) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
In this paper, High performance In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate with the InP recess etch stop layer and zigzag-shaped T-gates are presented. A InP recess etch stop layer is introduced to control the gate recess depth. A zigzag gate foot is proposed to enhance mechanical support of T-gates. The fabricated 35 ㎚ In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show 896 ㎃/㎜ of a maximum drain current at VDS=1 V and 961 mS/㎜ of a maximum transconductance at VGS = -0.2 V, VDS=1 V. In addition, high performance RF characteristics have been achieved with a current gain cutoff frequency(fγ) of 400 ㎓, and a maximum oscillation frequency(fmax) of 400 ㎓.