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알카리토금속-희토류 원소 화합물 산화막으로 형성된 AC-PDP 보호막의 특성연구
양두훈,김두철,최치규 濟州大學校 基礎科學硏究所 2000 基礎科學硏究 Vol.13 No.1
MgO and Ba_(0.6)Sr_(0.4)Gd₂O₄films were deposited on Si(100), soda-lime glass and PDP's test panel substrates by using e-beam vapor deposition. Ba_(0.6)Sr_(0.4)Gd₂O₄ powder for e-beam evaporator source was prepared by sintering a mixture of BaO, SrO and Gd₂O₄ powder at a molar ratio of 0.6 : 0.4 : 1 at 1200℃ for 12 hours in air. The Crystalline and chemical shift of electron orbital binding energy of the MgO and Ba_(0.6)Sr_(0.4)Gd₂O₄ films are investigated by X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS). And we have analyzed the secondary electron emission coefficient (γ₄) of films. The secondary electron emission coefficient (γ₁) of Ba_(0.6)Sr_(0.4)Gd₂O₄ film is higher than that of MgO film. A firing and the sustain voltage of MgO film are lower than that of Ba_(0.6)Sr_(0.4)Gd₂O₄ by 7 V, 8.8 V respectively. The luminance efficiency of Ba_(0.6)Sr_(0.4)Gd₂O₄film is better than of MgO film with 0.66 lm/W. MgO and Ba_(0.6)Sr_(0.4)Gd₂O₄films showed good transmittance properties within the visual range.
ICP-CVD 방법에 의한 TiN barrier metal 형성과 특성
이유성,양두훈,오대현,양창실,강민성,최치규,오경숙 濟州大學校 基礎科學硏究所 1999 基礎科學硏究 Vol.12 No.1
TiN films were prepared on Si(100) substrate by ICP-CVD(inductively coupled plasma chemical vapor deposition) using TEMAT(tetrakis ethymethamido titanium : Ti[N(CH₃)(C2₂H?]₄) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TiN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy(XPS). Polycrystalline TiN films B1 structure were grown at temperatures over 300℃. Perferentially oriented along TiN(200) films were obtained at temperatures over 400℃ with the folw rates of 5 and 100 sccm for N₂and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TiN and SiO₂was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at 500℃ are 2070 μ Ωcm, 6.06X10? cm?³and 10.5X10³㎠/V·sec, respectively.