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선택적 캐리어 수집을 위한 터널 산화막을 이용한 결정질 실리콘 태양전지
한상욱(Sanguk Han),심경배(Gyungbae Shim),박수영(Sooyoung Park),안시현(Shihyun Ahn),박철민(Cheolmin Park),조영현(Younghyun Cho),김현후(Hyunhoo Kim),이준신(Junsin Yi) 한국신재생에너지학회 2017 신재생에너지 Vol.13 No.3
In silicon solar cells, the doping process is performed to form a Back Surface Field (BSF) layer and is followed by many other processes. In this study, phosphorus doped a-Si:H doped at a high concentration in the tunnel oxide layer was crystallized through furnace annealing and Excimer Laser Annealing (ELA), in order to apply it to the Polycrystalline (Poly) - BSF layer in the Tunnel Oxide Passivated Contact (TOPCon) structure. In the excimer laser annealing fabrication process, an XeCl excimer laser with a wavelength of 308 nm was used, and the thickness of the a-Si layer and energy density of the laser were varied from 20 to 40 nm and from 390 to 450 mJ/cm², respectively. The highest carrier lifetime and implied VOC were found to be 588 ㎲ and 697 mV, respectively, at an a-Si thickness of 20 nm and energy density of the laser of 450 mJ/cm². The TOPCon cell was fabricated using wet oxidation and plasma oxidation. Its efficiency and FF were found to be higher when fabricated using the wet process, with values of 19.41% and 74.8%, respectively, while its VOC and JSC values were higher when it was fabricated using plasma oxidation, with values of 41.04 mJ/cm² and 644 mV, respectively. Therefore, if the conditions providing for a high implied VOC and carrier lifetime and sufficient crystallization were found, the efficiency of n-type TOPCon solar cells could be increased.
고효율 결정질 실리콘 태양전지 적용을 위한 p타입 에미터 표면의 전계 효과를 이용한 실리콘 산화막 패시베이션
박수영 ( Sooyoung Park ),심경배 ( Gyungbae Shim ),한상욱 ( Sanguk Han ),안시현 ( Shihyun Ahn ),박철민 ( Cheolmin Park ),조영현 ( Younghyun Cho ),김현후 ( Hyunhoo Kim ),이준신 ( Junsin Yi ) 한국신·재생에너지학회 2017 신재생에너지 Vol.13 No.4
The surface passivation is one of the crucial steps to achieve high conversion efficiencies in c-Si solar cells. A thermally stable thin film with a negative charge (for p-type surface) passivation layer is required to develop a good front passivation suitable for n-type c-Si solar cells. Silicon suboxide (SiOX) layer using PECVD provides a good passivation layer which has low temperature process and charge control in thin-film layer. In this paper, a PECVD stack layer consisting of SiOX and SiNX was employed for front side passivation. The optimal refractive index of SiOX and SiNX were found by varying the silane (SiH<sub>4</sub>), ammonia (NH<sub>3</sub>) and nitrous oxide (N<sub>2</sub>O) gas ratio for decrease optical loss. -1.71 × 10 <sup>11</sup> cm<sup> -2</sup> of negative charge (Q<sub>f</sub>) and 5×10 10 cm <sup>-2</sup> eV <sup>-1</sup> of D<sub>it</sub> (interface trap density) were obtained at 10 nm thick SiOX thin-film. With this optimized SiOx/SiNx stack layer on p <sup>+</sup> surface wafer using PECVD, the effective lifetime of 280 ㎲ and implied VOC of 690 mV were achieved. It is expected that the efficiency of the n-type silicon solar cell can be improved by applying the optimized SiOx condition to the front passivation layer.