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게이트 절연체의 두께에 대한 IGZO TFT의 전기적 특성
성효성(H.S Seong),김우성(W.S Kim),김홍승(H.S Kim),윤영(Young Yun),장낙원(N.W Jang) 한국마린엔지니어링학회 2010 한국마린엔지니어링학회 학술대회 논문집 Vol.2010 No.10
We simulate indium-gallium-zinc-oxide thin-film-transistors (IGZO TFTs). The effects of the interface between the Gate insulate and IGZO channel on the electrical properties of a-IGZO TFTs were simulated. IGZO TFTs was simulated by using the well-known physical model based on the exponential density of deep and tail states. Two kinds of Gate insulates were analyzed, which were aluminum oxide and silicon nitride. Simulation results were shown the thicker gate oxide makes the gate oxide capacitance smaller and implies higher threshold voltage and lower subthreshold swing.
김우성(W.S Kim),성효성(H.S Seong),장낙원(N.W Jang) 한국마린엔지니어링학회 2010 한국마린엔지니어링학회 학술대회 논문집 Vol.2010 No.10
Recently, the current characteristics of LED is important which is widely used in the kinds of display devices or lighting market. This study is to identify the current characteristics Bare Chip of GaN according to the temperature. It was found that the VF(Forward Voltage) and luminous intensity were getting down when temperature increased. Therefore, The wavelength of Blue chip was shifted long wavelength.