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서다희 ( Dahee Seo ),류희중 ( Heejoong Ryou ),서종현 ( Jong Hyun Seo ),황완식 ( Wan Sik Hwang ) 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.3
Ultrawide bandgap gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO<sub>2</sub> reduction is demonstrated using nanostructured Ga<sub>2</sub>O<sub>3</sub> photocatalyst under ultraviolet (254 nm) light source conditions. After the CO<sub>2</sub> reduction, C<sub>2</sub>H<sub>4</sub> remained as a by-product in this work. Nanostructured Ga<sub>2</sub>O<sub>3</sub> photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO<sub>2</sub> reduction to C<sub>2</sub>H<sub>4</sub> via nanostructured Ga<sub>2</sub>O<sub>3</sub> photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO<sub>2</sub> reduction and a simultaneous C<sub>2</sub>H<sub>4</sub> production using a low cost and high performance photocatalyst.