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반응표면모델을 이용한 한국형 고속전철 현가장치의 효율적인 최적설계
박찬경(Park, C.K.),김영국(Kim, Y.G.),배대성(Bae, D.S.),박태원(Park, T.W.) 한국소음진동공학회 2002 한국소음진동공학회 논문집 Vol.12 No.6
Computer simulation is essential to design the suspension elements of railway vehicle. By computer simulation, engineers can assess the feasibility of the given design factors and change them to get a better design. But if one wishes to perform complex analysis on the simulation, such as railway vehicle dynamic, the computational time can become overwhelming. Therefore, many researchers have used a surrogate model that has a regression model performed on a data sampling of the simulation. In general, metamodels(surrogate model) take the form y($\chi$)=f($\chi$)+$\varepsilon$, where y($\chi$) is the true output, f($\chi$) is the metamodel output, and is the error. In this paper, a second order polynomial equation is used as the RSM(response surface model) for high speed train that have twenty-nine design variables and forty-six responses. After the RSM is constructed, multi-objective optimal solutions are achieved by using a nonlinear programming method called VMM(variable matric method) This paper shows that the RSM is a very efficient model to solve the complex optimization problem.
강성관(S. K. Kang),고대홍(D.-H. Ko),오상호(S. H. Oh),박찬경(C. K. Park),이기철(K. C. Lee),양두영(D. Y. Yang),안태항(T. H. Ahn),주문식(M. S. Joo) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.4
15%와 42%의 Ge 함량을 갖는 poly Si_(1-x)Ge_x 박막을 700℃의 습식 산화 분위기에서 산화 공정을 진행하고, 박막의 산화 거동을 RBS, XPS, cross-sectional TEM으로 분석하였다. Poly Si_(0.85)Ge_(0.15) 박막의 경우, GeO₂에 비해 열적으로 안정한 SiO₂가 우천 생성되고, 반응에 참여하지 못한 Ge은 산화막과 poly Si_(1-x)Ge_x 박막의 계면에 축적되어 산화막 하부의 Ge 농도가 증가함을 확인하였다. Poly Si_(0.58)Ge_(0.42) 박막의 경우, 산화막내에 많은 양의 Ge이 GeO₂와 Ge의 형태로 존재하였고, 이러한 GeO₂의 형성으로 인해 산화속도의 증가를 확인하였다. 이러한 분석 결과를 바탕으로 Ge 함량 증가에 따른 poly Si_(1-x)Ge_x 박막의 산화 모델을 제 시하였다. We investigated the oxidation behavior of poly Si_(1-x)Ge_x films (X=0.15, 0.42) at 700℃ in wet oxidation ambients and analyzed the oxide by XPS, RBS, and cross-sectional TEM. In the case of poly Si_(0.85)Ge_(0.15) films, SiO₂ was formed on the poly Si_(1-x)Ge_x films and Ge was rejected from growing oxide, subsequently leading to the increase of Ge content. In the case of poly Si_(0.58)Ge_(0.42) films, we found that SiO₂-GeO₂ were formed on the poly Si_(1-x)Ge_x films due to high Ge content. Finally, we proposed the oxidation model of poly Si_(1-x)Ge_x films.