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박경우(Kyoungwoo Park),권정태(Jeong-Tae Kwon),박상린(Sangrin Park),한재현(Jae-Hyun Han),이헌(Heon Lee),김광수(Kwang-Soo Kim) 대한기계학회 2010 대한기계학회 춘추학술대회 Vol.2010 No.11
PECVD process has taken advantages of a fast process of manufacture and low cost of production because it is operated at lower temperature than that of existing process. In CVD process, the wafer quality is mainly dependent on the uniformity of film thickness and the film density may reduce due to a low temperature process. In the present work, numerical analyses are carried out to improve the deposition performance of annealing chamber. To do this, governing equations are solved by CFD and TDMAS ([(CH3)2N]3SiH) is considered as the working fluid. In addition, the effect of inlet velocity of O2 and position and length of nozzle on the deposition rate and uniformity are investigated numerically and the computational results are compared with those of experiments.