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문성왕,강동식,강영봉 濟州大學校 師範大學 科學敎育硏究所 1999 科學敎育 Vol.16 No.-
Based on the analytic solution to the electrostatic problem of the multi-junction trap with equal N-junction capacitances C and a well capacitance Cw, we obtain explicit expressions for the charging energy, the GiMs free energy, the energy barrier height and the threshold voltage. In particular, when an electron is already trapped in the store island, we analyze the effect of the well capacitance and the number of junction for single electron multi-junction txap. In the C_(w)/C>3/Ncase, an electron can be trapped in the store island height depernds on the number of junction, the value of barrier height is Ne^(2)/8C for C_(w)/C>1. Thus, when N is large and C_(w)/C is large, it is favor of trapping electron in the store island. We find that multi-junction trap with small well capacitance is not suitable for studying the single electron trap. The threshold voltage is proportioned to the bias voltage U and the number of junction N
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