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구리 박막의 그래핀(Graphene) 및 열처리에 의한 전기적-기계적 물성 영향에 관한 연구
김상민(Sang-Min Kim),황보윤(Yun Hwangbo),맥이사알렉산더(Mag-isa Alexan),오충석(Chung-Seog Oh),이학주(Hak-Joo Lee) 대한기계학회 2011 대한기계학회 춘추학술대회 Vol.2011 No.10
The important use of copper thin films as a reliable interconnect material for integrated circuits is hampered by reliability issues one of the most noted of which is the increased resistivity at the micro and nano scale attributed to grain boundary scattering. The usual approach to this problem is the annealing of copper at a high temperature. Graphene growth on copper via Thermal CVD includes the annealing of copper. This work examines the effects of graphene growth on the resistivity and mechanical properties of copper. Resistance measurement coupled with Digital Image Correlation were performed on dog-bone shaped specimens of copper (18 um thick), thermally anneal copper and graphene growth copper. Raman spectroscopy was performed to examine the graphene layer while an AFM was used to examine the surface topography of the copper and annealed copper surfaces.