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수열합성 공정으로 합성된 산화갈륨의 상변화에 따른 광촉매 특성
류희중,김선재,이인규,오훈정,황완식,Ryou, Heejoong,Kim, Sunjae,Lee, In Gyu,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga<sub>2</sub>O<sub>3</sub> at 500℃ annealing. As the annealing temperatures increase the α-Ga<sub>2</sub>O<sub>3</sub> is in part turned into β-Ga<sub>2</sub>O<sub>3</sub> and fully turned into β-Ga<sub>2</sub>O<sub>3</sub> after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga<sub>2</sub>O<sub>3</sub> and β-Ga<sub>2</sub>O<sub>3</sub> become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.
산화 그래핀을 이용한 구리이온 흡착과 투과도 특성을 이용한 구리이온 농도 실시간 측정
김승두,류희중,오훈정,황완식,Kim, Seungdu,Ryou, Heejoong,Oh, Hoon-Jung,Hwang, Wan Sik 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.
산화갈륨 나노구조 광촉매 특성을 이용한 이산화탄소 저감 및 에틸렌 생성 작용
서다희 ( Dahee Seo ),류희중 ( Heejoong Ryou ),서종현 ( Jong Hyun Seo ),황완식 ( Wan Sik Hwang ) 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.3
Ultrawide bandgap gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO<sub>2</sub> reduction is demonstrated using nanostructured Ga<sub>2</sub>O<sub>3</sub> photocatalyst under ultraviolet (254 nm) light source conditions. After the CO<sub>2</sub> reduction, C<sub>2</sub>H<sub>4</sub> remained as a by-product in this work. Nanostructured Ga<sub>2</sub>O<sub>3</sub> photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO<sub>2</sub> reduction to C<sub>2</sub>H<sub>4</sub> via nanostructured Ga<sub>2</sub>O<sub>3</sub> photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO<sub>2</sub> reduction and a simultaneous C<sub>2</sub>H<sub>4</sub> production using a low cost and high performance photocatalyst.