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류진화(J. H. Ryu),김창석(C. S. Kim),정명영(M. Y. Jeong) 한국정밀공학회 2005 한국정밀공학회 학술발표대회 논문집 Vol.2005 No.10월
The fabrication of mold for nano imprint lithography (NIL) is experimentally reported using the scanning probe lithography (SPL) technique, instead of the conventional E-beam lithography technique. The nanometer scale patterning structure is fabricated by the localized generation of oxide patterning on the silicon (100) wafer surface with a thin oxide layer. The fabrication method is based on the contact mode of scanning probe microscope (SPM) in air. The precision cleaning process is also performed to reach the low roughness value of R<SUB>rms</SUB> = 0.084 ㎚, which is important to increase the reproducibility of patterning. The height and width of the oxide dot are generated to be 15.667 ㎚ and 209.5 ㎚, respectively, by applying 17 V during 350 ㎳.