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고효율 결정질 실리콘 태양전지 적용을 위한 p타입 에미터 표면의 전계 효과를 이용한 실리콘 산화막 패시베이션
박수영 ( Sooyoung Park ),심경배 ( Gyungbae Shim ),한상욱 ( Sanguk Han ),안시현 ( Shihyun Ahn ),박철민 ( Cheolmin Park ),조영현 ( Younghyun Cho ),김현후 ( Hyunhoo Kim ),이준신 ( Junsin Yi ) 한국신·재생에너지학회 2017 신재생에너지 Vol.13 No.4
The surface passivation is one of the crucial steps to achieve high conversion efficiencies in c-Si solar cells. A thermally stable thin film with a negative charge (for p-type surface) passivation layer is required to develop a good front passivation suitable for n-type c-Si solar cells. Silicon suboxide (SiOX) layer using PECVD provides a good passivation layer which has low temperature process and charge control in thin-film layer. In this paper, a PECVD stack layer consisting of SiOX and SiNX was employed for front side passivation. The optimal refractive index of SiOX and SiNX were found by varying the silane (SiH<sub>4</sub>), ammonia (NH<sub>3</sub>) and nitrous oxide (N<sub>2</sub>O) gas ratio for decrease optical loss. -1.71 × 10 <sup>11</sup> cm<sup> -2</sup> of negative charge (Q<sub>f</sub>) and 5×10 10 cm <sup>-2</sup> eV <sup>-1</sup> of D<sub>it</sub> (interface trap density) were obtained at 10 nm thick SiOX thin-film. With this optimized SiOx/SiNx stack layer on p <sup>+</sup> surface wafer using PECVD, the effective lifetime of 280 ㎲ and implied VOC of 690 mV were achieved. It is expected that the efficiency of the n-type silicon solar cell can be improved by applying the optimized SiOx condition to the front passivation layer.