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MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어
정희석(Hee-Seok Jeong),고무순(Moo-Soon Ko),김대영(Dae-Young Kim),류한권(Han-Gwon Ryu),노재상(Jae-Sang Ro) 한국항해항만학회 2000 한국항해항만학회 학술대회논문집 Vol.3 No.1
This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the Rp (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.
다결정 실리콘 트렌지스터의 이온 샤워 도핑과 엑사이머 레이저 activation에 관한 연구
고무순,盧在相 弘益大學校 科學技術硏究所 2000 科學技術硏究論文集 Vol.11 No.-
Ion implantation being used in the fabrication process of semi-conductor is utilized for the formation of S/D. But It is difficult to apply to large area glass substrate in the process of TFT-LCD. Also It demands high temperature for the recovery of damage after ion implantation. Therefore, ion shower doping which is non-mass separate and dope directly large ion beam without scanning by D.C voltage is the promising method. In this study, we are going to make clear of material characteristics change after ion shower doping and predict the dominant ion species in ion beam generating according to processing condition of ISD. Also we have proceeded a study for minimizing degradation of gate electrode in laser activation and perfect removal of implant damage and effective impurity activation.
이온샤워 도핑 공정조건에 따른 저온 Poly-Si TFT 전기적 특성에 관한 연구
고무순,盧在相 弘益大學校 科學技術硏究所 2001 科學技術硏究論文集 Vol.12 No.-
A large ion beam that was extracted from the bucket ion source and a XeCl excimer laser were utilized for impurity doping and impurity activation. In this work, we studied the activation of impurities according to the change of acceleration voltage and doping time. It is observed that sheet resistance decreases as doping time increases, but over 5min. The phenomenon of hydrogen-eruption is occurred. So we concluded that the adequate doping time is within 5minutes, which has the dose of 5 X 10^(5)/㎠. We found that the dominant ion species are P2Hx^(+) or PHx^(+) for phosphorous ion, which could be changed according to various processing conditions of Ion Shower Doping. In order to reduce the effect of hot carrier stress, Experiments on low energy doping were carried out. As a result of above experiments, low energy doping of lkev appears good crystal and sheet resistance( -530Ω/□) from the analyses of UV-Reflectance and 4-point probe. Experimental results on the acceleration voltage shows that 10kev appears the lowest value of sheet resistance at the whole range of ELA-energy density, which can be explained in tei,ns of the projected range near to thickness of poly-Si.