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Microstructural Stability and Creep Performance of a Novel Low-Cost Single Crystal Superalloy
Z. H. Tan,X. G. Wang,Y. L. Du,Y. M. Li,Y. H. Yang,J. L. Liu,J. D. Liu,J. G. Li,Y. Z. Zhou,X. F. Sun 대한금속·재료학회 2022 METALS AND MATERIALS International Vol.28 No.7
The increasing pursuit of advanced aero-engines with lower ratio between the cost and performance has greatly promotedthe demanding of single crystal superalloys characterized by low cost and outstanding temperature capability. In this study,a novel low-cost single crystal superalloy was designed and the creep tests as well as micro-characterization were carried outon the experimental alloy. The results illustrated that the novel single crystal alloy exhibited an ideal microstructural stabilitywithout precipitating TCP phases, after long-term thermal exposure at the ultimate service temperature of third generationsingle crystal superalloys. Moreover, the experimental alloy with only 3 wt% Re addition demonstrated remarkable creepresistance and maintained a very low minimum creep rate at 1100 °C/137 MPa and 1120 °C/137 MPa, while the accumulationand coalescence of micro-pores had eventually led to the alloy fracture. Apart from that, the compact interfacial dislocationnetworks the 2nd γ′ phase were observed after high-temperature creep rupture, and the typical a < 010 > superdislocationswith relatively poor mobility was found at 1120 °C. At 760 °C/800 MPa, both the minimum creep velocity and entire creepstain was increased evidently, however, the ultimate creep rupture life of the alloy had still reached 200 h. The correspondingdeformation mechanism was identified as the combination of superdislocation pairs shearing and a/3 < 121 > partial dislocationcutting the γ′ phase with a SISF being generated. In general, the novel single crystal alloy characterized by remarkablemechanical properties and cost reduction possesses a great potential for future application in the advanced aircraft engines.
R&D Status of High-current Accelerators at IFP
J. J. Deng,J. S. Shi,W. P. Xie,L. W. Zhang,K. Z. Zhang,S. P. Feng,J. Li,M. Wang,Y. He,L. S. Xia,Z. Y. Dai,H. T. Li,L. Wen,S. F. Chen,X. Li,Q. G. Lai,M. H. Xia,Y. C. Guan,S. Y. Song,L. Chen 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.61
High-current accelerators have many important applications in Z-pinches, high-power microwaves, and free electron lasers, imploding liners and radiography and so on. Research activities on Zpinches, imploding liners, radiography at the Institute of Fluid Physics (IFP) are introduced. Several main high-current accelerators developed and being developed at IFP are described, such as the Linear Induction Accelerator X-Ray Facility Upgrade (LIAXFU, 12 MeV, 2.5 kA, 90 ns), the Dragon-I linear induction accelerator (20 MeV, 2.5 kA, 60 ns), and the Primary Test Stand for Z-pinch (PTS, 10 MA, 120 ns). The design of Dragon-II linear induction accelerator (20 MeV, 2.5 kA, 3 × 60 ns) to be built will be presented briefly.
( L. Wei ),( F. Wang ),( M. Zhang ),( J. Jia ),( A.A. Yakovlev ),( W. Xie ),( E.Z. Burnevich ),( J. Niu ),( Y.J. Jung ),( X. Jiang ),( M. Xu ),( X. Chen ),( Q. Xie ),( J. Li ),( J. Hou ),( H. Tang ),( 대한간학회 2017 춘·추계 학술대회 (KASL) Vol.2017 No.1
Background/Aims: Treatment-naive GT 1b-infected patients from mainland China, South Korea and Russia were assessed for SVR at follow-up week 12 (SVR12) after receiving daclatasvir (60 mg, QD) and asunaprevir (100 mg, BID) (DCV+ASV). Methods: Patients were randomized 3:1 to receive DCV+ASV (24 weeks; immediate treatment [IM]) or 12 weeks of placebo followed by DCV+ASV (24 weeks; placebo-deferred treatment [PD]). The primary endpoint was to evaluate SVR12 in the IM arm to the historical rate for peginterferon/ribavirin (70%). Secondary endpoints included overall safety and safety comparisons between the treatment arms during the first 12 weeks. Results: 207 patients were randomized to IM (n=155) or PD (n=52); Asian (86%), female (59%), IL28B CC genotype (68%) and median age 49 (range 18-73) years; cirrhosis (13%), HCV RNA ≥6x106 IU/mL (53%). SVR12 in the IM arm was 92% and broadly unaffected by most baseline factors assessed (Figure); SVR12 was higher in patients without (96%) baseline NS5A-L31M/V or Y93H polymorphisms. There were 6 virologic breakthroughs, 6 relapses and 1 detectable HCV RNA at end-of-treatment in the IM arm. Safety was mostly comparable between the two arms during the first 12 weeks. The most frequent adverse events (AEs; ≥5%) during DCV+ASV (24 weeks) treatment in both arms were aminotransferase, bilirubin and INR elevations, hypertension, fatigue and respiratory tract infections; the most frequent treatment-emergent grade 3/4 laboratory abnormalities were aminotransferase (≤4.5%) and hematologic, lipase and total bilirubin abnormalities (≤2%); one patient (IM) discontinued DCV+ASV for aminotransferase elevations, nausea and jaundice (all reversible); one patient PD) discontinued DCV+ASV for a fatal AE unrelated to treatment. Conclusions: These data demonstrate that DCV+ASV is a highly efficacious and well tolerated treatment for treatment-naive HCV GT 1b-infected patients. Those treated immediately with DCV+ASV achieved a 92% SVR12 rate which was unaffected by factors known to attenuate response to interferon.
Room Temperature Fabrication of MIMCAPs via Aerosol Deposition
Wang, C.,Kim, H. J.,Meng, F. Y.,Kim, H. K.,Li, Y.,Yao, Z.,Kim, N. Y. IEEE 2016 IEEE electron device letters Vol.37 No.2
<P>We report the microwave dielectric properties of BaTiO3 thin films fabricated via aerosol deposition, which is capable of applying functional ceramic films to Si-based semiconductor fabrication at room temperature. As the starting powder, BaTiO3 powder with an average particle size of 300 nm afforded a dense thin film with a thickness of 500 nm as well as a smooth interface with the Pt/Ti/SiO2/Si substrate. In comparison, the interface roughness of BaTiO3 thin film was degraded (>100 nm) when BaTiO3 powder with an average particle size of 450 nm was used as the starting powder, owing to the excessive impact energy during film growth. Metal-insulator-metal capacitors were realized on a Si wafer via electron beam evaporation and inductively coupled plasma etching in order to determine the relative permittivity, loss tangent, and current-voltage characteristics. The average values of the relative dielectric permittivity and loss tangent of the BaTiO3 thin film were 78 and 0.03, respectively, in the frequency range of 1-6 GHz.</P>
Y. Li,Y.L. Pei,R.Q. Hu,Z.M. Chen,Y. Zhao,Z. Shen,B.F. Fan,J. Liang,G.Wang 한국물리학회 2014 Current Applied Physics Vol.14 No.7
We have investigated the electrical performance of amorphous indiumegalliumezinc oxide (a-IGZO) thin-film transistors with various channel thicknesses. It is observed that when the a-IGZO thickness increases, the threshold voltage decreases as reported at other researches. The intrinsic field-effect mobility as high as 11.1 cm2/Vs and sub threshold slope as low as w0.2 V/decade are independent on the thickness of a-IGZO channel, which indicate the excellent interface between a-IGZO and atomic layer deposited Al2O3 dielectric even for the case with a-IGZO thickness as thin as 10 nm. However, the source and drain series resistances increased with increasing of a-IGZO channel thickness, which results in the apparent field-effect mobility decreasing. The threshold voltage shift (DVth) under negative bias stress (NBS) and negative bias illumination stress (NBIS) were investigated, also. The hump-effect in the sub threshold region under NBS and threshold voltage shift to negative position under NBIS were enhanced with decreasing of a-IGZO channel thickness, owing to the enhancement of vertical electrical field in channel.
Enhanced energy storage properties in PbZrO3 thin films via the incorporation of NiO
Wang X.W.,Chen J.Y.,Hu S.Y.,Yu K.X.,Yang F.,Shi Y.J.,Li J.H.,Hou M.Z.,Liu A.D.,Zheng M.M.,Yin S.Q.,Hu Y.C.,Shang J. 한국물리학회 2023 Current Applied Physics Vol.52 No.-
In this study, NiO–PbZrO3 composite films were deposited on SiO2/Si substrates buffered with LaNiO3 films via the sol-gel coating technique. The effects of NiO addition in PZO thin films on the microstructure, dielectric properties, leakage mechanism, ferroelectric properties and energy storage properties have been discussed. The dielectric constant increased with the addition of NiO, while the leakage current density decreased. Compared with pure PZO films, the maximum polarization of the composite films was improved. For the composite films prepared using the NiO precursor solution with 0.05 mol/L, the recoverable energy storage density of the NiO-PZO composite film is up to 19.6 J/cm3 under the electric field of 1038 kV/cm, which is 30% higher than that of the pure PZO film under the same conditions. Also, the energy storage efficiency of the composite film reaches 48%. Accordingly, we demonstrate a simple and convenient method by adding NiO to fabricate thin films with high energy storage performance.