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C. S. Peirce on First, Feeling, and Consciousness
Seongjae Kim 고려대학교 응용문화연구소 2013 에피스테메 Vol.0 No.10
Peirce’s rhematic iconic qualisign challenges the community of Peirce scholars in mainly three ways: First, ontologically, it merely exists as a pure possibility. Second, epistemologically, it is never perceived as itself, but it must always be embodied in a sinsign. Third, it seems impossible for a researcher to communicate a scientific research about it. This paper tries to overcome these difficulties by suggesting a possible case of the rhematic iconic qualisign; the humming sound of pianist Glenn Gould. Peirce’s definition of the First in its relation to feeling and consciousness is provided as the theoretical ground of this case study. The dominance of the First in Gould’s humming sound gives rise to a conclusion that music’s essence is its firstness, namely the quality of feeling.
Kim, Sung Yoon,Seo, Jae Hwa,Yoon, Young Jun,Kim, Jin Su,Cho, Seongjae,Lee, Jung-Hee,Kang, In Man The Korean Institute of Electrical Engineers 2015 Journal of Electrical Engineering & Technology Vol.10 No.3
Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.
Kim, Hoijoon,Park, Taejin,Park, Seongjae,Leem, Mirine,Ahn, Wonsik,Lee, Hyangsook,Lee, Changmin,Lee, Eunha,Jeong, Seong-Jun,Park, Seongjun,Kim, Yunseok,Kim, Hyoungsub Elsevier 2019 THIN SOLID FILMS - Vol.673 No.-
<P><B>Abstract</B></P> <P>For the fabrication of high-performance top-gated MoS<SUB>2</SUB> transistors, a uniform atomic layer deposition (ALD) of an ultrathin high-<I>k</I> gate dielectric film without abnormal leakage paths on a MoS<SUB>2</SUB> channel is required. In this study, we fabricated a ~5.2 nm-thick monolithic HfO<SUB>2</SUB> gate dielectric film by utilizing an e-beam-evaporated Hf seed layer (target thickness of 3 nm) prior to the ALD of a HfO<SUB>2</SUB> film (~2 nm). The Hf seed layer was fully converted to HfO<SUB>2</SUB> without metallic residues during the following ALD process, without damages to the Raman and photoluminescence characteristics of the underlying MoS<SUB>2</SUB>. The conformal and pinhole-free ALD of the subsequent HfO<SUB>2</SUB> film was verified using conductive atomic force microscopy. In addition, operation of a top-gated MoS<SUB>2</SUB> transistor was demonstrated by integrating the Hf-seeded HfO<SUB>2</SUB> gate dielectric film.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Conformal and monolithic Hf-seeded ALD-HfO<SUB>2</SUB> film is formed on MoS<SUB>2</SUB>. </LI> <LI> Hf seed layer formation does not impose significant damages on MoS<SUB>2</SUB>. </LI> <LI> Hf-seeded HfO<SUB>2</SUB> gate dielectric film can be integrated in top-gated MoS<SUB>2</SUB> transistor. </LI> </UL> </P>
Kim, Woong,Lee, Gyudo,Kim, Minwoo,Park, Joohyung,Jo, Seongjae,Yoon, Dae Sung,Park, Youngja H.,Hong, Junghwa,Park, Jinsung Elsevier Sequoia 2018 Sensors and actuators. B Chemical Vol.255 No.2
<P><B>Abstract</B></P> <P>Aluminum can be ionized in water by reacting with chlorides. Aluminum ions (Al<SUP>3+</SUP>) are believed to be very harmful to human health and are associated with Alzheimer’s disease. The detection of Al<SUP>3+</SUP> is extremely important, but conventional methods suffer from low sensitivity and cumbersome processes. Herein, we report ultra-sensitive and label-free detection of Al<SUP>3+</SUP> using gold nanoparticles (AuNPs) and Kelvin probe force microscopy (KPFM). Al<SUP>3+</SUP> was exposed on citrated AuNPs with different concentrations; Al<SUP>3+</SUP>/AuNP complexes were constructed via binding interactions between Al<SUP>3+</SUP> and the citrates. By probing the Al<SUP>3+</SUP>/AuNP complexes, we quantified the degree of interactions between Al<SUP>3+</SUP> and the citrated AuNPs using KPFM. As the Al<SUP>3+</SUP> concentration decreased, KPFM succeeded in exhibiting ultra-sensitive detection as low as 2amol (limit of detection 1pM, single droplet 2μL). We tested real samples from a sheet of aluminum foil, and detected ∼748amol (∼374pM, single droplet 2μL) Al<SUP>3+</SUP>. The results indicate that the combination of AuNPs and KPFM offers a robust, facile, and an ultra-sensitive platform technology for detecting Al<SUP>3+</SUP>.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ultra-sensitive and label-free sensing technique for Al<SUP>3+</SUP> ion sensing is proposed. </LI> <LI> The technique relies on surface potential changes of Al<SUP>3+</SUP>/AuNP complexes. </LI> <LI> Surface potential of complex is changed sensitively because of Al<SUP>3+</SUP> ion charge. </LI> <LI> Al<SUP>3+</SUP> ion is sensitively detected in boiled drinking water with aluminum foil. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
( Seongjae Kim ),( Hyeoung-eun Kim ),( Boyeon Kang ),( Youn-woo Lee ),( Hangeun Kim ),( Dae Kyun Chung ) 한국미생물생명공학회(구 한국산업미생물학회) 2017 Journal of microbiology and biotechnology Vol.27 No.10
Lipoteichoic acid (LTA), a cell wall component of gram-positive bacteria, is recognized by Toll-like receptor 2, expressed on certain mammalian cell surfaces, initiating signaling cascades that include nuclear factor kappa-light-chain-enhancer of activated B cells (NF-κB) and mitogen-activated protein kinase. There are many structural and functional varieties of LTA, which vary according to the different species of gram-positive bacteria that produce them. In this study, we examined whether LTA isolated from Staphylococcus aureus (aLTA) affects the expression of junction proteins in keratinocytes. In HaCaT cells, tight junctionrelated gene expression was not affected by aLTA, whereas adherens junction-related gene expression was modified. High doses of aLTA induced the phosphorylation of extracellular signal-regulated protein kinases 1 and 2, which in turn induced the epithelial-mesenchymal transition (EMT) of HaCaT cells. When cells were given a low dose of aLTA, however, NF-κB was activated and the total cell population increased. Taken together, our study suggests that LTA from S. aureus infections in the skin may contribute both to the outbreak of EMT-mediated carcinogenesis and to the genesis of wound healing in a dose-dependent manner.
Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory
Kim, Seunghyun,Kwon, Dae Woong,Lee, Sang-Ho,Park, Sang-Ku,Kim, Youngmin,Kim, Hyungmin,Kim, Young Goan,Cho, Seongjae,Park, Byung-Gook The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.2
In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.
Seongjae Jo,Jinyeong Kim,Yejin Kim,Oh Seok Kwon 한국진공학회(ASCT) 2021 Applied Science and Convergence Technology Vol.30 No.6
Owing to rapid climate change and increasingly stringent carbon regulations, carbon dioxide detection is becoming more important. In this study, we fabricate a cucurbit[6]uril-functionalized gold nanorod-based localized surface plasmon resonance (LSPR) gas sensor to detect carbon dioxide. The gold nanorods provide a high refractive index unit that enables the measurement of gas molecules with low molecular weights, while cucurbit[6]uril is a chemical receptor that binds to carbon dioxide owing to its structural characteristics. Therefore, cucurbit[6]uril was functionalized through direct adhesion on the surface of gold nanorods, which was replaced with citrate. The manufactured sensor can detect the presence of carbon dioxide at a maximum concentration of 400 ppm in the atmosphere. The high potential applicability of the cucurbit[6]uril-applied LSPR gas sensors is demonstrated in this study.