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Hong, Young Joon,Kim, Yong-Jin,Jeon, Jong-Myeong,Kim, Miyoung,Choi, Jun Hee,Baik, Chan Wook,Kim, Sun Il,Park, Sung Soo,Kim, Jong Min,Yi, Gyu-Chul IOP Pub 2011 Nanotechnology Vol.22 No.20
<P>We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications. </P>
Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes
Hong, Young Joon,Yoo, Jinkyoung,Doh, Yong-Joo,Kang, Suk Hoon,Kong, Ki-jeong,Kim, Miyoung,Lee, Dong Ryeol,Oh, Kyu Hwan,Yi, Gyu-Chul Royal Society of Chemistry 2009 Journal of materials chemistry Vol.19 No.7
<P>A combined experimental and theoretical investigation has clarified the nanometre-scale vapour-phase epitaxial growth of ZnO nanostructures on different crystal planes of GaN substrates. Under typical growth conditions, ZnO nanorods grow perpendicular to the GaN(0001) plane, but thin flat films form on GaN(101&cmb.macr;1), (101&cmb.macr;0) and (112&cmb.macr;0). High-resolution X-ray diffraction data and transmission electron microscopy confirm the heteroepitaxial relationship between the ZnO nanostructures and GaN substrates. These results are consistent with first-principles theoretical calculations, indicating that the ZnO surface morphologies are mainly influenced by highly anisotropic GaN/ZnO interface energies. As a result of the large surface energy gradients, different ZnO nanostructures grow by preferential heteroepitaxial growth on different facets of regular GaN micropattern arrays. High-resolution transmission electron microscopy shows that ZnO nanotubes develop epitaxially on micropyramid tips, presumably as a result of enhanced nucleation and growth about the edges.</P> <P>Graphic Abstract</P><P>Combined experimental and theoretical investigations have clarified the controlled catalyst-free vapour-phase epitaxial growth mode of ZnO nanorods, nanotubes, and thin films on different crystal planes of GaN substrates. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b816034a'> </P>
Visible‐Color‐Tunable Light‐Emitting Diodes
Hong, Young Joon,Lee, Chul‐,Ho,Yoon, Aram,Kim, Miyoung,Seong, Han‐,Kyu,Chung, Hun Jae,Sone, Cheolsoo,Park, Yong Jo,Yi, Gyu‐,Chul WILEY‐VCH Verlag 2011 ADVANCED MATERIALS Vol.23 No.29
<P><B>Visible‐color‐tunable light‐emitting diodes (LEDs)</B> with electroluminescent color that changes continuously from red to blue by adjusting the external electric bias are fabricated using multifacetted GaN nanorods with anisotropically formed 3D InGaN multiple‐quantum wells. Monolithically integrated red, green, and blue LEDs on a single substrate, operating at a fixed drive current, are also demonstrated for inorganic full‐color LED display applications. </P>
Detection of ASXL1 Codon 646 Variant Using Amplicon-Based Next-Generation Sequencing
Miyoung Kim,Nan Young Kim,Sangkyoon Hong,Jiwon Lee,Yonggeun Cho,Han-Sung Kim,Hee Jung Kang,Young Kyung Lee 대한임상검사정도관리협회 2022 Journal of Laboratory Medicine And Quality Assuran Vol.44 No.2
Background: The ASXL1 codon 646 variant is the most common ASXL1 variant that negatively impacts the prognoses of patients with myeloid malignancies, particularly those with myelodysplastic syndromes and acute myeloid leukemia. However, it has been suggested that this mutation is not somatic but rather an artifact of next-generation sequencing (NGS) owing to its location in an 8 bp guanine mononucleotide repeat. In this study, we evaluated the performance of amplicon-based NGS in discriminating the ASXL1 codon 646 variant. Methods: Amplicon-based NGS was performed on the Myeloid DNA Reference Standard HD829 in varying reference material dilution ratios using the TruSight Myeloid panel and a MiSeqDx system. Results: The expected and measured variant allele frequencies (VAFs) of the ASXL1 codon 646 mutation in the reference material were 40.00% and 18.65%, respectively. The measured VAFs in reference materials serially diluted at 1:1, 1:2, 1:4, and 1:8 were 9.09%, 5.82%, 1.92%, and 2.87%, respectively (y=0.4391x+0.8642; r 2=0.9846). Most of the other variants showed VAFs comparable to expected VAFs. Conclusions: The measured allele frequencies of the ASXL1 codon 646 variant in the serially diluted reference materials were approximately half their expected values, suggesting difficulties in the correct detection of the variant using amplicon-based NGS.
Park, Miyoung,Naidoo, Anita A.,Burns, Angie,Choi, Jin Kyu,Gatfield, Kelly M.,Vidgeon-Hart, Martin,Bae, Il-Hong,Lee, Chang Seok,Choi, Gyeyoung,Powell, Andrew J.,Park, Young-Ho,Fagg, Rajni Springer-Verlag 2018 Cell biology and toxicology Vol.34 No.2
<P>A recent hypothesis suggesting that the pharmacological target TRPV1 (transient receptor potential vanilloid subfamily, member 1) may function as a tumour suppressor, which potentially impacts the development of TRPV1 antagonist therapeutics for a range of conditions. However, little is known about the long-term physiologic effects of TRPV1 blockade in the skin. In vitro and in vivo studies suggested that the potent TRPV1 competitive antagonist AMG-9810 promoted proliferation in N/TERT1 cells (telomerase-immortalised primary human keratinocytes 1) and tumour development in mouse skin that was mediated through EGFR/Akt/mTOR signalling. We attempted to reproduce the reported in vitro and in vivo findings to further explore this hypothesis to understand the underlying mechanism and the risk associated with TRPV1 antagonism in the skin. In vitro proliferation studies using multiple methods and topical application with AMG-9810 and structurally similar TRPV1 antagonists such as SB-705498 and PAC-14028 were performed. Although we confirmed expression of TRPV1 in primary human epidermal keratinocytes (HEKn) and spontaneously immortalised human keratinocytes (HaCaT), we were unable to demonstrate cell proliferation in either cell type or any clear evidence of increased expression of proteins in the EGFR/Akt/mTOR signalling pathway with these molecules. We were also unable to demonstrate skin tumour promotion or underlying molecular mechanisms involved in the EGFR/Akt/mTOR signalling pathway in a single-dose and two-stage carcinogenesis mouse study treated with TRPV1 antagonists. In conclusion, our data suggest that inhibiting the pharmacological function of TRPV1 in skin by specific antagonists has not been considered to be indicative of skin tumour development.</P>