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( Feiyue Qian ),( Xi Chen ),( Jianfang Wang ),( Yaoliang Shen ),( Junjun Gao ),( Juan Mei ) 한국미생물생명공학회(구 한국산업미생물학회) 2017 Journal of microbiology and biotechnology Vol.27 No.10
The differentiations in nitrogen-converting activity and microbial community structure between granular size fractions in a continuous completely autotrophic nitrogen removal over nitrite (CANON) reactor, having a superior specific nitrogen removal rate of 0.24 g/(g VSS·d), were investigated by batch tests and high-throughput pyrosequencing analysis, respectively. Results revealed that a high dissolved oxygen concentration (>1.8 mg/l) could result in efficient nitrite accumulation with small granules (0.2-0.6 mm in diameter), because aerobic ammonium-oxidizing bacteria (genus Nitrosomonas) predominated therein. Meanwhile, intermediate size granules (1.4-2.0 mm in diameter) showed the highest nitrogen removal activity of 40.4 mg/(g VSS·h) under sufficient oxygen supply, corresponding to the relative abundance ratio of aerobic to anaerobic ammonium-oxidizing bacteria (genus Candidatus Kuenenia) of 5.7. Additionally, a dual substrate competition for oxygen and nitrite would be considered as the main mechanism for repression of nitrite-oxidizing bacteria, and the few Nitrospira spp. did not remarkably affect the overall performance of the reactor. Because all the granular size fractions could accomplish the CANON process independently under oxygen limiting conditions, maintaining a diversity of granular size would facilitate the stability of the suspended growth CANON system.
Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs
Shiqing Qin,Tong Cao,Feiyu Chen,Yan Gu,Jiayao Ying,Weiying Qian,Naiyan Lu,Xiangyang Zhang,Guofeng Yang 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.6
Gallium nitride (GaN) devices switch faster than silicon devices, making them more vulnerable to significant switching oscillations. To reduce the effect of crosstalk in GaN High Electron Mobility Transistor (GaN HEMT)-based bridges, this paper introduces a passive clamp circuit to restrain gate source voltage oscillations. Utilizing resistive and capacitive diodes, as well as diodes and transistors, a bootstrap driving circuit can be established. This circuit forms a low impedance Miller current path from the driving IC to the GaN device, which decreases the impact of both positive and negative crosstalk. Employing resistive and capacitive diodes, as well as diodes and transistors, a bootstrap driving circuit can be established. This circuit creates a low impedance Miller current path from the driving IC to the GaN device, reducing the effects of the positive and negative crosstalk. This method, which mostly uses passive components, simplifies the circuit design in comparison to other passive gate driver methods. Through dual-pulse testing with a GS661008P, its capacity to suppress positive and negative crosstalk in GaN devices has been confirmed.
Design of a Two Stage Low Noise System in the Frequency Band 1.8-2.2GHz for Wireless System
Zhao Xiaorong,Fan Honghui,Ye Feiyue,Qian Xiufang,Chen Dan,He Sheng 보안공학연구지원센터 2015 International Journal of Future Generation Communi Vol.8 No.3
In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. This paper presents the design of LNA and development of low bias (VD=3V, ID=20mA), the LNA operating in frequency range 1.8-2.2GHz using a feedback circuit. Design System (ADS) 2012 tool was used for design and simulation, and each design was tuned to get the optimum value for NF, power gain (S21), input return loss (S11) and reverse isolation (S12). Simulation results have indicated that the S21 achieves 33.2515±0.4475dB over the wide frequency band of 1.8-2.2 GHz, the gain was almost flat over the whole band. Noise figure (NF) maintains is 0.4945±0.0565 dB, S12 < -47.089 dB and S11 < -16.126 dB in the entire band.