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FDI and the Process of European Integration A Brief Overview
( A. Soci ) 세종대학교 경제통합연구소 (구 세종대학교 국제경제연구소) 2003 Journal of Economic Integration Vol.18 No.4
The object of this short paper is to focus on one of the many aspects of FDI - the one related to the location of industrial activity with respect to the process of European economic integration - with the aim of reviewing the most recent theoretical contributions to this topic, and to evaluate the robustness of the main empirical results. The overall evidence suggests that a precise assessment of the effects of the process of European integration on FDI and MNEs activity is far from being available. Much work has to be done especially on the data side in order to obtain a precise diagnosis of the European “new” industrial geography following integration.
How to Develop the Periphery?: The Regional Integration Case of Basso-Ferrarese in Italy
( N. Melloni ),( G. Palmieri ),( A. Soci ) 세종대학교 경제통합연구소(구 세종대학교 국제경제연구소) 2011 Journal of Economic Integration Vol.26 No.3
This paper-a piece of the research output of the EU-funded project TERA-investigates the dynamics of development in the area of Basso Ferrarese, in Italy. The area is a relatively underdeveloped zone located in the otherwise wealthy Emilia Romagna. The first part of the paper identifies some area-specific factors affecting the poor economic performances of Basso-Ferrarese. In the second part, on the base of our findings, we run several CGE simulations focussing mainly on the potential impact of productivity gains. Finally, we discuss the policy implications of our results suggesting that investment in tourism and environmental and cultural heritage may allow for a more comprehensive path of development. Industrial development through productivity increase will have some positive effects which, however, will be mainly concentrated in relatively small areas.
Role of edge facets on stability and electronic properties of III–V nanowires
Migas Dmitri B,Filonov Andrew B,Yatsyna Dmitri A,Rusli Dr,Soci Cesare 나노기술연구협의회 2015 Nano Convergence Vol.2 No.14
Results of our ab initio calculations of 〈111〉-oriented GaP, GaAs, GaSb, InP, InAs and InSb nanowires with the zinc-blende structure indicate morphology to crucially affect their electronic properties. For these nanowires, where {011} facets characterize their hexagonal cross section, the formation of small {112} facets between the adjacent {011} ones provides a more stable structure and removes surface states from the gap region even without hydrogen passivation. Our new structural model also predicts a crossover between the indirect and direct band gap in GaP, GaAs and GaSb nanowires when increasing diameters starting from 4 nm, while InP, InAs and InSb nanowires display the direct band gap at diameters of 1.5 nm and larger. Analysis of charge distribution between atoms suggests that {011} facets are positively charged even though a (011) surface of these materials is considered to be non-polar.