VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 = Analysis of Si Etch Uniformity of Very High Frequency Driven –Capacitively Coupled Ar/SF6 Plasmas

다국어 초록 (Multilingual Abstract)

The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R2 value. It means that the etch rate distribution is explained by the ion energy flux.

참고문헌 (Reference)

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