Nickel germanosilicide에서의 열 안정성 향상 및 junction leakage current 특성분석

다국어 초록 (Multilingual Abstract)

In this study, the effects of a triple capping layer (Ti/Ni/TiN) on the electrical and structural properties of nickel mono-silicide (NiSi) have been investigated as a function of rapid thermal annealing temperature. It is shown that the samples with the triple capping layer produce lower sheet resistances than the samples with double (Ti/TiN) or single (TiN) capping layers across the whole annealing temperature range. Scanning transmission electron microscopy results show that after annealing interfacial layers consisting of Ni, Ti, and Si elements are formed in the samples with the triple and double capping layers. It is further shown that the triple capped samples are more thermally stable than the double and single capped samples. This could be attributed to the segregation of Ti atoms in grain boundaries of NiSi film, which reduces grain boundary energy. The simple model is presented to explain the influence of Ti reaction flux on the surface morphology and the interface uniformity between the silicide and Si substrate. And, highly thermal stable Ni-Germano silicide is proposed utilizing Ni-Ta and Ni-Pd alloy and Co/TiN capping layer. The sheet resistance of Ni-Germano silicide using pure-Ni increased dramatically after the post-silicidation annealing at 600 ℃ for 30min. However, in case the proposed Ni-Ta and Ni-Pd alloy and Co/TiN capping structure, low temperature silicidation and wide range of RTP process window were achieved.
Moreover, sheet resistance showed stable characteristics up to 700 ℃, 30 min high temperature annealing. Therefore, the thermal immune Ni-Germanosilicide using the Ni-Ta and Ni-Pd alloy and Co/TiN capping tri-layer is highly promising for future SiGe-based ULSI technology.

목차 (Table of Contents)

• Ⅰ. 서 론 = 1
• Ⅱ. Silicide의 이론적 배경 = 4
• 2-1. 살리사이드(Salicide, self-aligned silicide) = 4
• 2-2. Ti 실리사이드 및 Co 실리사이드의 특징 = 6
• 2-3. Ni 실리사이드의 특징 = 8
• 2-3-1. Ni 실리사이드의 장점 = 8
• 2-3-2. Ni 실리사이드의 단점 = 8
• 2-3-3. Ni 실리사이드의 열 안정성 개선을 위해 제안된 방법 = 9
• 2-3-2-1. Capping layer의 적용 = 9
• 2-3-2-2. Interlayer의 적용 = 11
• Ⅲ. Germano silicide의 이론적 배경 = 13
• 3-1. SiGe를 사용하게 된 계기 = 13
• 3-2. strained silicon 의 특징 = 14
• 3-3. Ni-Germanosilicide의 특징 = 17
• 3-3-1. Ni-Germanosilicide의 장•단점 = 17
• 3-3-2. Ni-Germanosilicide의 열 안정성 개선을 위해 제안된 방법 = 18
• 3-3-2-1. Capping layer의 적용 = 18
• 3-3-2-2. Interlayer의 적용 = 19
• 3-3-2-3. Alloy target의 적용 = 19
• 3-4. Junction leakage current 특성 = 20
• Ⅳ. 실험 및 측정방법 = 21
• 4-1. 실험 순서 = 21
• 4-2. 시편의 전기적, 물리적 특성 분석 = 23
• 4-2-1. 면저항 측정 = 23
• 4-2-2. 그 외의 silicide의 분석장비 = 25
• Ⅴ. 실험 결과 및 고찰 = 26
• 5-1. Ni/Ti/Ni/TiN를 적용한 Ni-Silicide의 열안정성 개선 = 26
• 5-2. 합금 타겟을 적용한 Ni-Germanosilicide의 열안정성 개선 = 40
• 5-2-1. Ni-Ta을 합금한 구조 = 42
• 5-2-2. Ni-Pd을 합금한 구조 = 51
• 5-2-3. Ni-V을 합금한 구조 = 60
• 5-3. Junction leakage current의 특성 = 65
• Ⅵ. 결론 = 72
• 참고 문헌 = 74
• ABSTRACT = 85