Low-Resistivity Sputtered Films of Transparent Conducting Ta-Doped In2O3 Oxide

다국어 초록 (Multilingual Abstract)

Low-resistivity Ta-doped In2O3 (InTaO) films were grown on Corning1737 glass substrates from a ceramic target of (In0.95Ta0.05)2O3 by radio-frequency magnetron sputtering.
The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO2 (0 Torr pO2 1.0 × 10−4 Torr) and the deposition temperature TS (25C TS 350 C) during the deposition. The film grown at 350 C and pO2 = 0 Torr showed a resistivity as low as 0.28 m cm with a carrier density of 7.4 × 1020 cm−3, a Hall mobility of 30.1 cm2V−1s−1,
an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In2O3 (ITO).

참고문헌 (Reference)

1 "Introduction to Solid State Physics" 1996

2 "Element of X-ray Diffraction" 1959