The effect of nitrogen doping on Znic oxide (ZnO) thin film transistor has been studied in this work. The nitrogen doping was done by dielectric barrier discharge (DBD) method during the ZnO deposition. After minimum annealing temperature of 300℃, b...
The effect of nitrogen doping on Znic oxide (ZnO) thin film transistor has been studied in this work. The nitrogen doping was done by dielectric barrier discharge (DBD) method during the ZnO deposition. After minimum annealing temperature of 300℃, both ZnO (without DBD) and ZnO:N(with DBD) TFTs show the transfer characteristics with the similar on-to-off current ratio (Ion/off), threshold voltage (V<SUB>th</SUB>), and subthreshold swing (S.S.) property values. However, the V<SUB>th</SUB> shift of ZnO:N TFT after bias temperature stress test is much less than that of ZnO TFT. This shows that nitrogen doping on ZnO improves the stability of ZnO:N TFT.