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      폴리실리콘 박막을 이용한 압력분포 시스템 분석 = The Analysis of Pressure Distribution System using the Poly-Silicon Membrane

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      https://www.riss.kr/link?id=A104138307

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      다국어 초록 (Multilingual Abstract)

      Piezo-resistive pressure sensors are consists of a module which is sensor part and hybrid circuit part using the piezo-resistive effect of single crystalline silicon. The circuit department comes to be divided on amplification circuit and temperature compensation circuit. The amplification circuit part needs to amplify signal to ECU (Electronic Control Unit) from micro-signal at sensor. The temperature compensation circuit from operational temperature scope follows at temperature for decreasing the output range. Namely, pressure sensor of single crystalline silicon materials because has the other side high temperature dependent characteristic where the sensitivity against a pressure is high certainly the temperature compensation circuit was under in necessity. Temperature compensation circuit the operational process is various and the variable must be considered complicated characteristic is following many in production. In order to improve like this problem point, with perception department about under using compensation circuit of separate way without today it researches the pressure distribution system which is under using in industrial site poly-silicon membrane on only amplification circuit.
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      Piezo-resistive pressure sensors are consists of a module which is sensor part and hybrid circuit part using the piezo-resistive effect of single crystalline silicon. The circuit department comes to be divided on amplification circuit and temperature ...

      Piezo-resistive pressure sensors are consists of a module which is sensor part and hybrid circuit part using the piezo-resistive effect of single crystalline silicon. The circuit department comes to be divided on amplification circuit and temperature compensation circuit. The amplification circuit part needs to amplify signal to ECU (Electronic Control Unit) from micro-signal at sensor. The temperature compensation circuit from operational temperature scope follows at temperature for decreasing the output range. Namely, pressure sensor of single crystalline silicon materials because has the other side high temperature dependent characteristic where the sensitivity against a pressure is high certainly the temperature compensation circuit was under in necessity. Temperature compensation circuit the operational process is various and the variable must be considered complicated characteristic is following many in production. In order to improve like this problem point, with perception department about under using compensation circuit of separate way without today it researches the pressure distribution system which is under using in industrial site poly-silicon membrane on only amplification circuit.

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      목차 (Table of Contents)

      • Ⅰ. 서 론
      • Ⅱ. 설계 및 제작
      • Ⅲ. 실험조건 및 방법
      • Ⅳ. 결과 및 고찰
      • Ⅰ. 서 론
      • Ⅱ. 설계 및 제작
      • Ⅲ. 실험조건 및 방법
      • Ⅳ. 결과 및 고찰
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