Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat pan...
Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanism of poly silicon (poly-Si) grains in thin films via laser annealing of amorphous silicon (a-Si) thin films are studied using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are investigated by FESEM analysis. The optical reflectance and transmittance during the crystallization process are observed using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.