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3 Sato, H., "Study on ultraprecision machining process of silicon-based etalon: effects of diamond grinding on breakage of ultra-thin etalon" 2009
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6 Kang, R. K., "Removal of scratch on the surface of MgO single crystal substrate in chemical mechanical polishing process" 254 (254): 4856-4863, 2008
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8 Zhong, Z. W., "Optimization of the chemical mechanical polishing process for optical silicon substrates" 60 (60): 1197-1206, 2012
9 Menk, G., "New polish chemistry and process for improved fixed abrasive CMP performance" 1-6, 2007
10 Guo, D. M., "Material removal mechanism of chemo-mechanical grinding (CMG) of Si wafer by using soft abrasive grinding wheel (SAGW)" 389 : 459-464, 2009
1 Yuan, Z. W., "Tribochemical polishing CVD diamond film with FeNiCr alloy polishingplate prepared by MA-HPS technique" 21 : 50-57, 2012
2 Manivannan, R., "The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives" 255 (255): 3764-3768, 2009
3 Sato, H., "Study on ultraprecision machining process of silicon-based etalon: effects of diamond grinding on breakage of ultra-thin etalon" 2009
4 Sasaki, J., "Study on improvement of material removal rate in chemomechanical grinding (CMG) of Si wafer" 389 : 13-17, 2009
5 Lee, H. S., "Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing(CMP)processes" 37 (37): 483-490, 2013
6 Kang, R. K., "Removal of scratch on the surface of MgO single crystal substrate in chemical mechanical polishing process" 254 (254): 4856-4863, 2008
7 Zhong, Z. W., "Recent advances in polishing of advanced materials" 23 (23): 449-456, 2008
8 Zhong, Z. W., "Optimization of the chemical mechanical polishing process for optical silicon substrates" 60 (60): 1197-1206, 2012
9 Menk, G., "New polish chemistry and process for improved fixed abrasive CMP performance" 1-6, 2007
10 Guo, D. M., "Material removal mechanism of chemo-mechanical grinding (CMG) of Si wafer by using soft abrasive grinding wheel (SAGW)" 389 : 459-464, 2009
11 Fu, W. E., "Material removal mechanism of Cu-CMP studied by nanoscratching under various environmental conditions" 278 (278): 87-93, 2012
12 Huang, W. H., "Material removal and particulate generation during abrasion of copper films using a fixed abrasive pad" 17 (17): 525-530, 2004
13 Zhang, Y., "Large-scale fabrication of lightweight Si/SiC ceramic composite optical mirror" 58 (58): 1204-1208, 2004
14 Liu, Y., "Investigation on the final polishing slurry and technique of silicon substrate in ULSI" 66 (66): 438-444, 2003
15 Nguyen, V. H., "Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process" 76 (76): 95-99, 2004
16 Teo, E. J., "Fabrication of smooth silicon optical devices using proton beam writing" 269 (269): 2448-2451, 2011
17 Tian, Y. B., "Elimination of surface scratch/texture on the surface of single crystal Si substrate in chemo-mechanical grinding(CMG)process" 255 (255): 4205-4211, 2009
18 Song, X. L., "Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2" 18 (18): 178-182, 2008
19 Xu, W. H., "Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles, pad and sapphire substrate during chemical mechanical polishing(CMP)" 257 (257): 2905-2911, 2011
20 Takahashi, H., "Effects of sodium carbonate and ceria concentration on chemo-mechanical grinding of single crystal Si wafers" 76 : 428-433, 2009
21 Lin, S. C., "Effects of slurry components on the surface characteristics when chemical mechanical polishing NiP/Al substrate" 483 (483): 400-406, 2005
22 Park, K. H., "Effects of pad properties on material removal in chemical mechanical polishing" 187 : 73-76, 2007
23 Lim, G., "Effects of oxidants on the removal of tungsten in CMP process" 257 (257): 863-868, 2004
24 Takahashi, H., "Effect of wheel additive on chemo-mechanical grinding(CMG)of single crystal Si wafers" 447 : 106-110, 2010
25 Lee, M. Y., "Effect of alkaline agent in colloidal silica slurry for polycrystalline silicon chemical mechanical polishing" 46 (46): 5089-5094, 2007
26 Yongchang Guo, "Effect of Pad Groove Geometry on Material Removal Characteristics in Chemical Mechanical Polishing" 한국정밀공학회 13 (13): 303-306, 2012
27 Tian, Y. B., "Development of fixed abrasive chemical mechanical polishing process for glass disk substrates" 2013
28 Zhang, L. C., "Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers" 52 (52): 657-662, 2010
29 Sugawara, T., "Demonstration of 40-Gb/s low groupdelay- ripple tunable dispersion compensator using angled etalon with multiple reflections" 18 (18): 2377-2379, 2006
30 Park, K., "Correlation between break-in characteristics and pad surface conditions in silicon wafer polishing" Elsevier BV 205 (205): 360-365, 2008
31 Velden, P. V. D., "Chemical mechanical polishing with fixed abrasives using different subpads to optimize wafer uniformity" 50 (50): 41-46, 2000
32 Zhong, Z. W., "Chemical mechanical polishing of polymeric materials for MEMS applications" 435 (435): 295-301, 2006
33 Zhong, Z. W., "Chemical mechanical polishing of polycarbonate and poly methyl methacrylate substrates" 81 (81): 117-124, 2005
34 Lei, H., "Chemical mechanical polishing of hard disk substrate with α-alumina-g-polystyrene sulfonic acid composite abrasive" 518 (518): 3792-3796, 2010
35 Tian, Y. B., "Chemical mechanical polishing of glass disk substrates : preliminary experimental investigation" 28 (28): 488-494, 2013
36 Tsai, H. J., "Chemical mechanical polishing in elastic contact and partial hydrodynamic lubrication : modeling and experiments" 26 (26): 319-324, 2011
37 Zantye, P. B., "Chemical mechanical planarization for microelectronics applications" 45 (45): 89-220, 2004
38 Wang, Y. G., "Chemical effect on the material removal rate in the CMP of silicon wafers" 27 (27): 312-316, 2011
39 Wang, L., "Ceria concentration effect on chemical mechanical polishing of optical glass" 253 (253): 4951-4954, 2007
40 Tian, Y. B., "A novel single step thinning process for extremely thin Si wafers" 76 : 434-439, 2009
41 Vasilev, B., "A method for characterizing the pad surface texture and modelling its impact on the planarization in CMP" 104 : 48-57, 2013
42 이창석, "A Study on the Correlation between Pad Property and Material Removal Rate in CMP" 한국정밀공학회 12 (12): 917-920, 2011