3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300&#8451;) SiO₂ 및 SiON 박막 공정 = Plasma-Enhanced Atomic-Layer-Deposited SiO₂ and SiON Thin Films at Low Temperature (< 300&#8451;) using ICP Type Remote Plasma for 3-Dimensional Electronic Devices

다국어 초록 (Multilingual Abstract)

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.