In this paper, we have investigated, using infrared spectroscopy, structural and compositional characteristics of a various thin films grown on silicon wafers from O₂gas at 800℃. From IR transmission spectra, we observed that peak positions and ...
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https://www.riss.kr/link?id=A2008448
1990
Korean
404
학술저널
89-96(8쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
In this paper, we have investigated, using infrared spectroscopy, structural and compositional characteristics of a various thin films grown on silicon wafers from O₂gas at 800℃. From IR transmission spectra, we observed that peak positions and ...
In this paper, we have investigated, using infrared spectroscopy, structural and compositional characteristics of a various thin films grown on silicon wafers from O₂gas at 800℃.
From IR transmission spectra, we observed that peak positions and features were changed in the spectra of films with increasing oxide layer. The spectra revealed a clear thickness dependent structural transformation in thermal SiO₂.
The Lambert-Bouguer's law for thin films has been confirmed, and the absorption coeffecient calculated for n-and p-type were 6.14×10⁴cm-¹ and 7.68×10⁴cm-¹, respectively.
트리스디에틸아미노수소화알루미늄 리튬을 이용한 아미드의 알데히드로의 부분환원
BF₂- 킬레이트가 있는 새로운 Bichromophore의 합성
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