A novel approach to extract threshold voltage for organic thin film transistors based on Rensselaer Polytechnic Institute poly-Si TFT model is suggested, which considers gate voltage dependent mobility. From a linear curve which is obtained by dividin...
A novel approach to extract threshold voltage for organic thin film transistors based on Rensselaer Polytechnic Institute poly-Si TFT model is suggested, which considers gate voltage dependent mobility. From a linear curve which is obtained by dividing saturation regime current with linear regime current, threshold voltage can be extracted from x-axis intercept of the curve. Compare to conventional extraction method, uniform threshold voltage is obtained by using the suggested method.