1 E. B. Stoneham, "Working with nine different foundries" 11-14, 1990
2 Y. H. Chen, "Threshold behavior in backgating in metalsemiconductor field effect transistor: Induced by limitation of channel-substrate junction to leakage current" 81 : 511-515, 1997
3 J. Wu, "Sidegating effect on Schottky contact in ionimplanted GaAs" 78 : 7422-7423, 1995
4 S. M. Sze, "Physics of Semiconductor Devices 2nd ed" Wiley 1999
5 Y. Ohno, "Mechanism of electrostatic potential conduction in semi insulating substrates" 66 : 1217-1221, 1990
6 R. Anholt, "Mechanism of EL2 effects on GaAs field-effect transistor threshold voltages" 62 : 3995-3997, 1987
7 Michael Shur, "GaAs Devices and Circuits" Plenum press 1986
8 K. Shenai, "Channel-buffer (substrate) interface phenomenon in GaAs MESFET’s fabricated by molecular-beam epitaxy" 35 : 590-603, 1988
9 A. E. Bond, "Backgating reduction in MESFETs using an AlAs native oxide buffer layer" 32 : 2271-2273, 1996
10 C. Kocot, "Backgating in GaAs MESFET’s" 30 : 963-968, 1982
1 E. B. Stoneham, "Working with nine different foundries" 11-14, 1990
2 Y. H. Chen, "Threshold behavior in backgating in metalsemiconductor field effect transistor: Induced by limitation of channel-substrate junction to leakage current" 81 : 511-515, 1997
3 J. Wu, "Sidegating effect on Schottky contact in ionimplanted GaAs" 78 : 7422-7423, 1995
4 S. M. Sze, "Physics of Semiconductor Devices 2nd ed" Wiley 1999
5 Y. Ohno, "Mechanism of electrostatic potential conduction in semi insulating substrates" 66 : 1217-1221, 1990
6 R. Anholt, "Mechanism of EL2 effects on GaAs field-effect transistor threshold voltages" 62 : 3995-3997, 1987
7 Michael Shur, "GaAs Devices and Circuits" Plenum press 1986
8 K. Shenai, "Channel-buffer (substrate) interface phenomenon in GaAs MESFET’s fabricated by molecular-beam epitaxy" 35 : 590-603, 1988
9 A. E. Bond, "Backgating reduction in MESFETs using an AlAs native oxide buffer layer" 32 : 2271-2273, 1996
10 C. Kocot, "Backgating in GaAs MESFET’s" 30 : 963-968, 1982