<P>In recent years, high-performance amorphous oxide semiconductor thin-film transistor (AOS TFT) technology is required to meet the increasing demand for novel displays, such as rollable, transparent, or augmented reality head-up displays. It h...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107471947
2018
-
SCOPUS,SCIE
학술저널
37216-37222(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>In recent years, high-performance amorphous oxide semiconductor thin-film transistor (AOS TFT) technology is required to meet the increasing demand for novel displays, such as rollable, transparent, or augmented reality head-up displays. It h...
<P>In recent years, high-performance amorphous oxide semiconductor thin-film transistor (AOS TFT) technology is required to meet the increasing demand for novel displays, such as rollable, transparent, or augmented reality head-up displays. It has been demonstrated that voltage-based modulation techniques for AOS-based active layers can achieve high-performance AOS TFTs. The voltage-based modulation technique allows specific ions to migrate into the active layer depending on the polarity of the applied voltage, thus easily modulating the active layer. Additionally, potassium superoxide (KO<SUB>2</SUB>) solution is employed in AOS TFTs as a source of potassium (K<SUP>+</SUP>) and highly reactive superoxide radical (O<SUB>2</SUB><SUP>•-</SUP>) ions. The K<SUP>+</SUP> and O<SUB>2</SUB><SUP>•-</SUP> ions in the KO<SUB>2</SUB> solution are controlled by an applied voltage bias and rapidly migrate into the active layer, directly changing its chemical composition and electrical properties. AOS TFTs that use this technique exhibit better electrical performance than conventional AOS TFTs: the field-effect mobility improved from 10.05 to 15.31 cm<SUP>2</SUP>/V·s; the subthreshold swing decreased from 0.44 to 0.33 V/dec; the <I>I</I><SUB>on/off</SUB> ratio increased from 1.24 × 10<SUP>7</SUP> to 3.17 × 10<SUP>8</SUP>; and the threshold voltage shift decreased from 5.2 to 3.4 V under a positive bias stress test conducted over 10 000 s. Ultimately, this approach to modulating the internal ion distribution in oxide semiconductors could provide opportunities for various AOS devices to attain desirable electrical characteristics.</P>
[FIG OMISSION]</BR>
Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics
Designing Surface Chemistry of Silver Nanocrystals for Radio Frequency Circuit Applications