<P><B>Abstract</B></P> <P>The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ...
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https://www.riss.kr/link?id=A107471202
2018
-
SCI,SCIE,SCOPUS
학술저널
505-510(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ...
<P><B>Abstract</B></P> <P>The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).</P> <P><B>Highlights</B></P> <P> <UL> <LI> ALD Mg interlayer suppresses oxidation of sublayer against the oxidant in ALD MgO. </LI> <LI> Oxidized ALD Mg interlayer has (200)-preferred orientation essential for MTJ barrier. </LI> <LI> ALD MgO on Mg interlayer is grown with (200)-preferred orientation. </LI> <LI> Insertion of ALD Mg interlayer is effective method to form ALD MgO barrier in MTJ. </LI> </UL> </P>
Hydrothermal synthesis and upconversion luminescence of Y2WO6:Yb3+/Er3+ crystals