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1 Peters, L., "good reasons to use in situ particle monitors, Semicond"
2 Takahashi. K. M, "capabilities and limitations of in situ particle monitors in silicon processing equipment" 14 : 2983-2993, 1996
3 Shen, Z., "The Formation of Highly Uniform Silicon Nanoparticles in High Density Silane Plasmas" 94 : 2277-2283, 2003
4 Bowling, R. A., "Status and Needs of In-Situ Real-time Process Particle Detection" 32 : 22-27, 1989
5 Hara, T., "Reflow of PSG Layers by Halogen Lamp Short Duration Heating Technique" 23 : 452-454, 1984
6 Dance, D. L., "Reducing Process Equipment Cost of Ownership Through In Situ Contamination Prevention and Reduction" 10 : 21-27, 1992
7 McMurry, P. H., "Particle-Beam Mass-Spectrometer Measurements of Particle Formation During Low- Pressure Chemical-Vapor-Deposition of Polysilicon and SiO2-Films" 14 : 582-587, 1996
8 Kim, T., "Particle formation during low-pressure chemical vapor deposition from silane and oxygen; Measurement, modeling and film properties" 20 : 413-423, 2002
9 Ziemann, P. J., "Particle beam mass spectrometry of submicron particles charged to saturation in an electron beam" 26 : 745-756, 1995
10 Campbell, S., "Investigation of particle formation during the plasma enhanced chemical vapor deposition of amorphous silicon, oxide, and nitride films" 16 : 483-489, 1998
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