<P><B>Abstract</B></P> <P>To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structu...
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https://www.riss.kr/link?id=A107475134
2018
-
KCI등재,SCIE,SCOPUS
학술저널
667-672(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structu...
<P><B>Abstract</B></P> <P>To investigate the effect of quantum dot (QD) layers on the photovoltaic process of InAs/GaAs QD solar cell (QDSC), QD layers were embedded in conventional GaAs p-n junction SC (GaAs SC) structures. The photoreflectance (PR) was examined at different temperatures (<B> <I>T</I> </B>) and excitation light intensities (<B> <I>I</I> </B> <SUB> <B> <I>ex</I> </B> </SUB>) to investigate the photovoltaic effects through observation of the Franz-Keldysh oscillations (FKOs) in the PR spectra. The evaluated the p-n junction electric fields (<B> <I>F</I> </B> <SUB> <B> <I>pn</I> </B> </SUB>) of the InAs QDSC was different from that of the GaAs SC. Moreover, InAs QDSC show that the different photovoltaic behaviors compared with GaAs SC by varying <B> <I>I</I> </B> <SUB> <B> <I>ex</I> </B> </SUB> and <B> <I>T</I> </B>. From these considerations, we suggest that the different photovoltaic behaviors are caused by the effect of the additional photo-carrier generation in InAs QD layers resulting in enhancement of the field screening effect in <B> <I>F</I> </B> <SUB> <B> <I>pn</I> </B> </SUB>.</P>
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