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(Invited) Nano Characterization of Materials
Schroder, D.K. Pennington, N.J.; Electrochemical Society 2010 p.3-22
(Invited) Recent Advances in the Smart Cut Technology for CMOS Applications
Kononchuk, O.; Landru, D.; Veytizou, C.; Guiot, E. Pennington, N.J.; Electrochemical Society 2010 p.23-36
(Invited) Germanium on Sapphire Technology
Gamble, H.S.; Baine, P.B.; Low, Y.H.; Rainey, P.V.; Montgomery, J.H.; Bain, M.; Armstrong, B.; McNeill, D.W.; Mitchell, N.S. Pennington, N.J.; Electrochemical Society 2010 p.37-50
The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon
Laven, J.; Job, R.; Schulze, H.; Niedernostheide, F.; Haublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L. Pennington, N.J.; Electrochemical Society 2010 p.51-62
Yamada-Kaneta, H.; Baba, S.; Nagai, Y.; Akatsu, M.; Mitsumoto, K.; Yanase, T.; Okabe, K.; Ono, Y.; Nemoto, Y.; Goto, T. Pennington, N.J.; Electrochemical Society 2010 p.63-74
Point Defects in Silicon Melt Growth from the Experimental Results
Abe, T.; Takahashi, T. Pennington, N.J.; Electrochemical Society 2010 p.75-102
(Invited) Lifetime Degradation in Boron Doped Czochralski Silicon
Voronkov, V.V.; Falster, R.J.; Schmidt, J.; Bothe, K.; Batunina, A. Pennington, N.J.; Electrochemical Society 2010 p.103-112
Getter Effects in Low Oxygen and High Oxygen Czochralski Silicon Wafers
Kissinger, G.; Kot, D.; Hackl, W. Pennington, N.J.; Electrochemical Society 2010 p.113-120
Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates
Murphy, J.D.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. Pennington, N.J.; Electrochemical Society 2010 p.121-132
Niobium Contamination in Silicon
Polignano, M.; Codegoni, D.; Borionetti, G.; Bonoli, F.; Brivio, J.; Greco, S.; Marino, A.; Monge, P.; Patoprsta, I.; Privitera, V. Pennington, N.J.; Electrochemical Society 2010 p.133-144