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Lucovsky, G. Pennington, NJ; Electrochemical Society 2005 p.3-28
Prospect of High- kappa /Metal Gate Stack Technology for Future CMOS Devices
Lee, B. H.; Kirsch, P.; Majhi, P.; Song, S.; Choi, R.; Moumen, N.; Bersuker, G. Pennington, NJ; Electrochemical Society 2005 p.29-38
Ordered Structure in the Thermal Oxide Layer on Silicon Substrates
Shimura, T.; Mishima, E.; Watanabe, H.; Yasutake, K.; Umeno, M.; Tatsumura, K.; Watanabe, T.; Ohdomari, I.; Yamada, K.; Kamiyama, S. Pennington, NJ; Electrochemical Society 2005 p.39-48
Muraoka, K.; Matsushita, D.; Kato, K.; Nakasaki, Y.; Inumiya, S.; Eguchi, K.; Takayanagi, M. Pennington, NJ; Electrochemical Society 2005 p.51-60
Quantitative Analysis of Reaction of Hydrogen-Terminated Si(100) with Oxygen during Heating
Urabe, S.; Nishimura, K.; Nishikawa, S.; Morita, S.; Morita, M. Pennington, NJ; Electrochemical Society 2005 p.61-68
Focused Electron Beam Induced Deposition of Silicon Dioxide
Wanzenboeck, H.; Fischer, M.; Gottsbachner, J.; Mueller, S.; Brezna, W.; Schramboeck, M.; Bertagnolli, E. Pennington, NJ; Electrochemical Society 2005 p.69-78
Improvement in Characteristics of Thin Film Transistors by High Pressure Steam Annealing
Yamamoto, N.; Watanabe, T.; Masaki, M.; Yoshinouchi, A. Pennington, NJ; Electrochemical Society 2005 p.79-86
Thermal Stability of LaOx/Si Interfacial Transition Layer
Nohira, H.; Yoshida, T.; Okamoto, H.; Sakai, W.; Nakajima, K.; Suzuki, M.; Kimura, K.; Aun, N. J.; Kobayashi, Y.; Ohmi, S. Pennington, NJ; Electrochemical Society 2005 p.87-96
Photodetection Characteristics of SnO~2-Ultrathin SiO~2-Si Structures
Chikamoto, M.; Hashimoto, H.; Horikoshi, K.; Shinozaki, A.; Morita, S.; Arima, K.; Uchikoshi, J.; Morita, M. Pennington, NJ; Electrochemical Society 2005 p.97-102
Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress
Hollauer, C.; Ceric, H.; Selberherr, S. Pennington, NJ; Electrochemical Society 2005 p.103-114