Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 %), those on a random...

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A101055623
박민석 ; 서병준 ; 유영배 ; 문병기 ; 손세모 ; 정수태 ; Park, Min-Seok ; Seo, Byung-Joon ; Yoo, Young-Bae ; Moon, Byung-Kee ; Son, Se-Mo ; Chung, Su-Tae
2005
Korean
KCI등재
학술저널
338-343(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 %), those on a random...
Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 %), those on a randomly oriented LNO show a random crystal orientation (F=60 %). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.
저압화학증착을 이용한 실리콘-게르마늄 이종접합구조의 에피성장과 소자제작 기술 개발
혼합 산화제를 사용한 텅스텐 막의 전기화학적 부식 및 CMP 특성