Phase formation and dielectric study of Bi doped BaTi0.75Zr0.25O3 ceramic

다국어 초록 (Multilingual Abstract)

Perovskite types Ba1-xBi2x/3Ti0.75Zr0.25O3 (with x = 0.0, 0.025, 0.05) ceramics have been prepared through
solid state reaction route. The room temperature XRD study suggests that all the compositions have single
phase cubic symmetry with space group Pm-3m. Temperature dependent dielectric studies of the
ceramics have been investigated in the frequency range of 50 Hz–1 MHz. The densities of the samples
are determined using Archimedes’ principle and found to be ~98% of X-ray density. The dielectric study
revealed diffuse phase transition of second order. A broad dielectric anomaly coupled with the shift of
dielectric maxima toward a higher temperature with increasing frequency indicates the relaxor-type
behavior in the ceramics. The diffusivity increases with increase in Bi contents in the studied composition
range. The transition temperature decreases with increase in Bi contents due to the decrease in grain size.

다국어 초록 (Multilingual Abstract)

Perovskite types Ba1-xBi2x/3Ti0.75Zr0.25O3 (with x = 0.0, 0.025, 0.05) ceramics have been prepared through
solid state reaction route. The room temperature XRD study suggests that all the compositions have single
phase cubic symmetry with space group Pm-3m. Temperature dependent dielectric studies of the
ceramics have been investigated in the frequency range of 50 Hz–1 MHz. The densities of the samples
are determined using Archimedes’ principle and found to be ~98% of X-ray density. The dielectric study
revealed diffuse phase transition of second order. A broad dielectric anomaly coupled with the shift of
dielectric maxima toward a higher temperature with increasing frequency indicates the relaxor-type
behavior in the ceramics. The diffusivity increases with increase in Bi contents in the studied composition
range. The transition temperature decreases with increase in Bi contents due to the decrease in grain size.

참고문헌 (Reference)

1 J. Ravez, 325 : 481-, 1997

2 B. Beleckas, 29 : 202-, 1989

3 K. Uchino, 151 : 321-, 1994

4 J. Ravez, 34 : 1199-, 1997

5 J. Ravez, 32 : 955-, 1998

6 J. Ravez, 9 : 1609-, 1999

7 J. Ravez, 2 : 525-, 2000

8 A. Kerfah, 42 : 189-, 2000

9 H. Khemakhem, 12 : 5951-, 2000

10 J. Ravez, 178 : 793-, 2000

11 L. Zhou, 5 : 191-, 2000

12 L. Zhou, 21 : 531-, 2001

13 F. Bahri, 184 : 459-, 2001

14 J. Ravez, 162 : 260-, 2001

15 S. Komine, 14 : 2043-, 2002

16 F. Bahri, 5 : 1235-, 2003

17 A. Simon, 5 : 1459-, 2004

18 A.N. Salak, 16 : 2785-, 2004

19 Z. Jiwei, 262 : 341-, 2004

20 W.S. Choi, 237 : 438-, 2002

21 A. Outzourhit, 340 : 214-, 2002

22 F. Zimmermann, 24 : 1729-, 2004

23 P.S. Dobal, 89 : 8085-, 2001

24 L.E. Cross, 151 : 305-, 1994

25 X.G. Tang, 131 : 163-, 2004

26 W.E. Lines, "Principles and Applications of Ferroelectrics and Related Materials" Oxford University Press, 77-, 2001