The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric propertie...
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https://www.riss.kr/link?id=A82266785
2009
Korean
560
학술저널
1322-1323(2쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric propertie...
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were about -3.45%/K.
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