ZnS : DyF₃ 교류 박막 EL소자의 제작과 특성조사 = Characteristics of ZnS : DyF₃electroluminescence devices and its fabrication

다국어 초록 (Multilingual Abstract)

EL device of which rare-earth floride DyF_3 doped in ZnS host is fabricated and measured its electric and optical characterics in our experiment. Its optical spectrum is depend on active layer and host, and the changes of the substrate te,perature during fulfilled deposition process is partcipated improving of crystallity of the active active layer. Annealing processes help removing the film distortion of active layer and improve the crystallity of internal of the grain. However, it may not affect the changes of the grain size. The enhamcement of crystallity resulted from the changes of the substrate temperature and the re-crystallization of luminance center be caused by annealing improved brightness and efficiency of EL device. Brightness of which device constructed in our experiment is 128cd/㎡ in 1KHz sinusoidal wave. And it emited whitish-yellow light which wavelength is 570㎚.

목차 (Table of Contents)

• Ⅰ. 서론
• Ⅱ. 이론
• 1. 충격여기기구(Chen-Krupka model) Ⅳ.
• Ⅲ. 실험
• 1. 박막 EL 소자의 제작
• 2. 투명 전극의 제작
• 3. 절연층의 제작
• 4. 발광층의 제작
• 5. 배면전극의 제작
• Ⅳ. 결과 및 검토
• 1. 투명전극의 전기광학적 특성
• 2. 발광층의 특성
• 3. EL소자의 전기적 광학적 특성
• Ⅴ. 결론