FABRICATION OF 0.4μm GATE PHEMT USING CONVENTIONAL OPTICAL LITHOGRAPHY

다국어 초록 (Multilingual Abstract)

An optical sub-micron gate process is developed using the dielectric side wall The fabricated gate length is 0.4 fin. The application of this sub-micron process to PHEMT shows good characteristics. Using this sub-micron gate process, the 0.4 ㎛ x 200㎛ gate PHEMT was fabricated By the measurements I _(dss) is 150 mA/mm, g^(int)_(m,max) is 566 mS/mm, f_t is 38 GHz, f_(max) 60 GHz. Also, F_(min) is 0.87 dB, G_(a,asso) is 9.8 dB at 12 GHz Thus the fabricated PHEMT is applicable in the C to X band frequency areas. Also the developed optical sub-micron gate process will need the lowest cost in the fabrication of the commercial devices and MMIC's.