Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

다국어 초록 (Multilingual Abstract)

The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.

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