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Electron emission at Si~3N~4-GaAs interfaces prepared with H~2, Ar and H~2~+Ar plasma pretreatments
Wang, Q. H.; Bowser, M. I.; Swanson, J. G. Institute of Physics 1994 p.281-286
Local vibrational mode spectroscopy of beryllium- and zinc-hydrogen complexes in GaP
McCluskey, M. D.; Haller, E. E.; Walker, J.; Johnson, N. M. Institute of Physics 1994 p.287-290
High quality etched/regrown GaAs/GaAs interfaces formed by an all in-situ Cl~2 etching process
Mui, D. S. L.; Strand, T. A.; Thibeault, B. J.; Coldren, L. A. Institute of Physics 1994 p.291-294
Kordos, P.; Betko, J.; Foerster, A.; Kuklovsky, S. Institute of Physics 1994 p.295-300
Electrical characterisation of GaAs layers grown by molecular beam epitaxy at low temperature
Luo, J. K.; Thomas, H.; Morgan, D. V.; Westwood, D. Institute of Physics 1994 p.301-306
Van Es, C. M.; Eijkemans, T. J.; Wolter, J. H.; Pereira, R. Institute of Physics 1994 p.307-312
Goldman, R. S.; Chen, J.; Kavanagh, K. L.; Wieder, H. H. Institute of Physics 1994 p.313-318
Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy
Matsumura, A.; Prasad, R. S.; Thornton, T. J.; Fernandez, J. M. Institute of Physics 1994 p.319-322
Effects of annealing using plasma-CVD SiN film as a cap on 2DEG mobility
Nakata, S.; Yamamoto, M.; Mizutani, T. Institute of Physics 1994 p.323-328
Low ion energy ECR etching of InP using Cl~2/N~2 mixture
Miyakuni, S.; Hattori, R.; Sato, K.; Ishihara, O. Institute of Physics 1994 p.329-334