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Process Modeling and Process Control Needs for Process Synthesis for ULSI Devices
Hosack, H. H. Electrochemical Society 1995 p.1-5
Influence of Fluorine and BF~2 Implants on the Transient Enhanced Diffusion of Boron
Vuong, H.-H.;Gossmann, H.-J.;Rafferty, C. S.;Luftman, H. S. Electrochemical Society 1995 p.6-12
Modeling of Low Thermal Budget Redistribution of Arsenic in Silicon: Dynamic Clustering
Mathiot, D.;Scheiblin, P. Electrochemical Society 1995 p.13-20
Clejan, I.;Dunham, S. T. Electrochemical Society 1995 p.21-31
A Two-Dimensional Model for Strain from Dislocation Loops in Ion-Implanted Silicon
Chaudhry, S.;Thompson, R. H.;Jones, K. S.;Law, M. E. Electrochemical Society 1995 p.32-42
Modeling of Notching Caused by Aspect Ratio Dependent Charging During High Density Plasma Etching
Hane, M.;Kinoshita, T.;McVittie, J. P. Electrochemical Society 1995 p.43-52
Issues and Challenges in MOSFET Scaling Below 0.6 Microns for ULSI Technology
Tasch, A. F. Electrochemical Society 1995 p.53-58
A 47-GHz F,SiHBT with a mc-Si/Very Thin �SiC~2 Double-Layer Emitter
Kondo, M.;Shiba, T.;Tamaki, Y.;Nakamura, T. Electrochemical Society 1995 p.59-67
A 0.25mm MOSFET Technology Using In-Situ Rapid Thermal Gate Dielectrics
Zhang, K. X.;Osburn, C. M.;Hames, G.;Parker, C. Electrochemical Society 1995 p.68-79
Practical Technology of Ta~2O~5 Stacked Capacitor for ULSI DRAMS
Suzuki, H.;Kamiyama, S.;Sakao, M.;Takaishi, Y. Electrochemical Society 1995 p.80-85